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Research on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001) Si Surface Based on Abrasiv
  • ISSN号：1877-7058
  • 期刊名称：Procedia Engineering
  • 时间：2011.12.12
  • 页码：441-446
  • 相关项目：耦合能量超精密加工SiC单晶基片的机理与工艺研究
作者： Su Jianxiu|Du Jiaxi|Liu Haina|
同期刊论文项目
耦合能量超精密加工SiC单晶基片的机理与工艺研究
期刊论文 17 专利 3
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