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Analysis on Contact Forms of Interface in Wafer CMP Based on Lubricating Behavior
ISSN号:0255-5476
期刊名称:Materials Science Forum
时间:2012.11.11
页码:313-317
相关项目:耦合能量超精密加工SiC单晶基片的机理与工艺研究
作者:
Zhang Shengfang|Su Jianxiu|Du Jiaxi|
同期刊论文项目
耦合能量超精密加工SiC单晶基片的机理与工艺研究
期刊论文 17
专利 3
同项目期刊论文
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Design of the temperature signal wireless receiver and display system on polishing interface in chem
Material removal rate of 6H-SiC crystal substrate CMP using an alumina (Al2O3) abrasive
Influence of lapping parameters on 6H-SiC Crystal Substrate (0001) C surface based on diamond partic
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Study on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001) C Surface Based on Abrasive Al
固结磨料研磨SiC晶片亚表面损伤截面显微检测技术
Design of CMP slurry in CMP SiC crystal substrate (0001) Si surfacebased on alumina (Al2O3) abrasive
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Design of detection system of temperature signal on polishing interface in CMP semiconductor materia
硅片加工表面层损伤检测技术的试验研究
Material removal rate of 6H-SiC crystal substrate CMP using an aluminaAl2O3 abrasive