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中文摘要：
模拟了垂直腔面发射激光器（VCSEL）的反射谱和量子阱增益谱,采用金属有机物化学气相沉积设备外延生长了980 nm的垂直腔面发射激光器,制作了氧化孔径为14 μm的内腔式氧化限制型VCSEL器件,其阈值电流为3.3mA,阈值电压为1.8V,斜率效率为0.387 W/A,室温直流电流为22.8 mA时,输出光功率为5 mW.
英文摘要：
In this paper, simulated were the reflectance spectrum and the quantum well gain of vertical cavity surface emitting lasers （VCSEL）. And high quality epitaxial wafers of 980 nm VCSEL were grown by metal-organic chemical vapor deposition （MOCVD）. A kind of intracavity oxide restricted VCSEL device with the oxide aperture of 14 μm was fabricated in later process. The indexes of the device are obtained as. the threshold current of 3.3 mA, the threshold voltage of 1.8 V, the slope efficiency of 0. 387 W/A, and the output optical power of 5 mW under DC 22.8 mA at room temperature.
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