中文摘要：

采用热扩散方法,对AlN薄膜进行了Si掺杂。利用电子能量散射谱（EDS）以及高温变温电导对薄膜进行了分析。EDS测试结果表明：在1 250℃的温度下,氮化硅（SiNx）作为Si的扩散源,可以实现对AlN薄膜的Si热扩散掺杂。高温电流-电压（I-V）测试表明：在460℃测试温度下,AlN薄膜在热扩散掺杂以后,其电导从1.9×10^-3S·m-1增加到2.1×10^-2S·m^-1。高温变温电导测试表明：氮空位（VN^3＋）和Si在AlN中的激活能为1.03 eV和0.45 eV。

英文摘要：

This paper deals with the characteristics of aluminium nitride（AlN） films doped by silicon（Si） thermal diffusion.The films are analyzed by energy dispersive X-ray spectroscopy（EDS） and high-temperature dependent electrical conductivity.The results of EDS show that the Si element is successfully doped into the AlN films using SiNx as the diffusion source at the temperature of 1 250 ℃.The high-temperature current-voltage（I-V） measurements show that the electrical properties of the AlN films can be prominently improved by Si thermal diffusion,and at the measured temperature of 460 ℃ their electrical conductivities increase from 1.9×10^-3 S·m^-1 to 2.1×10^-2 S·m^-1 after the Si thermal diffusion.The high-temperature dependence of thermal conductivity suggests that the activation energies of VN^3＋ and Si are about 1.03 eV and 0.45 eV,respectively.