中文摘要：

制备了GaN基金属-绝缘层-半导体（MIS）结构紫外探测器，并测量了其暗电流和光谱响应。通过分析其暗电流，发现在反偏情况下，其主要电流输运机制为隧穿复合机制；在正偏情况下，随着偏压的增大，电流输运机制从隧穿机制变为空间电荷限制电流机制。光谱响应测试结果显示，该探测器在－5V的偏压下，在315nm处获得了最大响应度170mA／W，探测度为2．3×10^12cm·Hz^1/2·W^-1。此外，还研究了不同厚度I层对器件光电压的影响，结果表明，光电压受隧穿机制与漏电流机制的共同制约。

英文摘要：

The GaN based metal-insulator-semiconductor （M1S） ultraviolet （UV） photodetectors were fabricated. The dark I-V curves and responsivity spectrum of the photodetectors were measured, and the current transport mechanisms were analyzed. By analyzing the current transport mechanics, it was found that the tunneling-recombination mechanism dominated at the reverse bias and with the forward bias increasing, the current transport mechanism changed from tunneling mecha- nism to space charge limited current （SCLC） mechanism. Under 5 V reverse bias, it was found that the best responsivity and detectivity of the GaN based MIS detector were 170 mA/W and 2.3 × 10^12 cm · Hz^1/2 · W^-1 at 315 rim. The photo-voltages of GaN based UV photodetectors of different depth of insulator layers were studied, and it was found that the photo-voltage was limited by the tunneling procedure and leakage current.