中文摘要：

论述了多孔硅的特点和制备方法，简单介绍双槽电化学腐蚀法的特点，并采用双槽电化学腐蚀法成功制备了多孔硅。多孔硅的扫描电镜（SEM）照片表明．孔径尺寸小．均匀性好，腐蚀结构规则。实验结果表明，衬底导电类型影响着多孔硅的制备条件。

英文摘要：

The characteristic and preparing of porous silicon were discussed. The porous silicon was successfully prepared by double-cell electrochernical etching. The SEM photos of porous silicon prepared by double-cell electrochernical etching were observed. The results show that the porous silicon obtained by this method has the smaller hole diameter , good uniformity, ordered etching structure. The type of substrate affect the condition of the porous silicon preparation.