中文摘要：

采用溶胶-凝胶法在Si／Si3N4／Poly-Si／Ti／Pt基片上制备PZT压电薄膜，为了选择更适合微电子机械系统（MEMS）器件的压电薄膜，采用一般热处理和快速热处理对锆钛酸铅（PZT）压电薄膜进行干燥和结晶。首先，采用V（H2O）：V（HCL）：V（HF）280mL：120mL：4drops（4滴HF溶液）配比的腐蚀液在室温下对未结晶的PZT压电薄膜进行了湿法腐蚀微细加工；然后，对图形化好的压电薄膜进行再结晶的热处理，实验结果表明这种方法可用于压电薄膜微器件的制备。

英文摘要：

Lead zirconate titanate （PZT） ferroelectric thin films were prepared by Sol-Gel technology on the Si/ Si3N4/Poly-Si/Ti/Pt substrate. In order to find a more suitable preparation method of piezoelectric film MEMS （Micro-Electrical-Mechanical-System） devices, the commonly and celerity heat treatment were adopted for torrefaction and crystal of PZT thin film. At first, the unrecrystallized PZT thin films were etched by V（H2 O） ：V（ HCL）： V（HF） = 280 mL：120 mL：4drops solutes at room temperature. We find that the unrecrystallized PZT thin films can be easily wiped off and have a good figuring effect. Then these patterned PZT films were recrystallized. The experiment results indicate that this disposing mode can be applied in the piezoelectric thin film micro-device manufacturing.