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中文摘要：
重点研究了直拉（CZ）硅中氧沉淀在快速热处理（RTP）和常规炉退火过程中的高温消融以及再生长行为．实验发现，RTP是一种快速消融氧沉淀的有效方式，比常规炉退火消融氧沉淀更加显著．硅片经RTP消融处理后，在氧沉淀再生长退火过程中，硅中体微缺陷（BMD）的密度显著增加，BMD的平均尺寸略有增加；而经过常规炉退火消融处理后，在后续退火过程中，BMD的密度变化不大，但BMD的尺寸明显增大．氧沉淀消融处理后，后续退火的温度越高，氧沉淀的再生长越快．
英文摘要：
The effects of high temperature treatment by conventional furnace annealing and rapid thermal processing （RTP） on the dissolution and the re-growth behavior of oxygen precipitation in Czochralski （CZ） silicon wafers are investigated. It is found that RTP is a rapid and effective way to dissolve oxygen precipitation in comparison with conventional furnace annealing. After dissolution treatment by RTP,the density of bulk micro-defects （BMDs） increases remarkably during the sub- sequent anneal for the rerowth of oxygen precipitation, while after dissolution treatment by conventional furnace annea- ling, the density of BMDs is nearly unchanged during the subsequent annealing for the re-growth of oxygen precipitation. The higher the subsequent annealing temperature,the faster the re-growth of oxygen precipitation in silicon wafers subjected to the dissolution treatment.
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