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Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal anneal
  • ISSN号：0022-8979
  • 期刊名称：JOURNAL OF APPLIED PHYSICS
  • 时间：2014.11.28
  • 页码：204901-
  • 相关项目：超深亚微米SOI器件的重离子单粒子效应新机理研究
作者： Ignacio Martin-Bragado|He Chaohui|Hang Zang|Peng Zhang|
同期刊论文项目
超深亚微米SOI器件的重离子单粒子效应新机理研究
期刊论文 16 会议论文 1
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