位置：成果数据库 > 期刊 > 期刊详情页
Evolution of atoms with special coordination number in beta-SiC with temperature
  • ISSN号：0022-3115
  • 期刊名称：Journal of Nuclear Materials
  • 时间：2013.4
  • 页码：236-240
  • 相关项目：超深亚微米SOI器件的重离子单粒子效应新机理研究
作者： Guo, Daxi|Yang, Tao|Bo, Tao|Zhang, Peng|
同期刊论文项目
超深亚微米SOI器件的重离子单粒子效应新机理研究
期刊论文 16 会议论文 1
同项目期刊论文
Si SOI微剂量探测器电荷收集特性数值模拟
Hot carrier effect on thebipolar transistors’ response to electromagnetic interference
Preliminary studies on the emulation of 14 MeV neutron irradiationin SiCwith heavy ions
Re-evaluationof neutron displacement cross sections for silicon carbide by a Monte Carloapproach
Analysis of primary damage in silicon carbide
不同偏置影响锗硅异质结双极晶体管单粒子效应的三维数值仿真研究
Soft error reliability in advanced CMOS techn
Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal anneal
超低泄漏电流二极管单粒子位移损伤电流计算
Kineticsof single particle displacement damage in silicon
The role of point defectsin the swelling and elastic modulus of irradiated cubic silicon carbide
Hot carrier effect on asingle SiGe HBT's EMI response
硅单粒子位移损伤多尺度模拟研究
不同偏置影响锗硅异质结双极晶体管单粒子效应的三维数值仿真研究
Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor