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Hot carrier effect on asingle SiGe HBT's EMI response
  • ISSN号：0026-2714
  • 期刊名称：Microelectronics Reliability
  • 时间：2015.9.26
  • 页码：2627-2633
  • 相关项目：超深亚微米SOI器件的重离子单粒子效应新机理研究
作者： Cen Xiong, Yonghong Li, Shuhuan Liu, Du Tang, Jinxin Zhang, C|
同期刊论文项目
超深亚微米SOI器件的重离子单粒子效应新机理研究
期刊论文 16 会议论文 1
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