中文摘要：

对晶向为（100）的p型单晶硅片进行表面刻蚀,制作减反射绒面.在质量分数为3%的氢氧化钠溶液中分别加入不同质量分数的异丙醇溶液,在温度为80℃、时间为40 min的条件下对单晶硅片进行刻蚀.实验结果显示,加入质量分数为8%的异丙醇溶液刻蚀的硅片表面形貌最好,在波长为700~900 nm范围内能够获得较低的反射率,最佳反射率为10.42%.保持实验条件不变,在氢氧化钠-异丙醇混合液中分别加入不同质量分数的碳酸钠溶液,对单晶硅片进行刻蚀.实验结果显示,加入质量分数为0.5%的碳酸钠溶液对制作绒面的反射率影响不大,加入质量分数为0.3%的碳酸钠溶液使制作绒面的反射率大大提高,不利于制作绒面的形成.

英文摘要：

The surface of p-type（100） oriented crystalline silicon wafer is texturized to reduce the surface reflectance.The mixed solution with a concentration of 3 wt% sodium hydroxide（NaOH） and adding different concentration of isopropyl alcohol（IPA） were used to etch the surface of crystalline silicon wafer at 80 ℃ for 40 min in the experiments.The results showed that we obtain the best surface morphology with a sufficient low reflectivity of 10.42% when adding 8 wt% IPA to 3 wt% NaOH solutions between 700 and 900 nm.Under the above conditions,an average reflectivity of 11.22% and 14.27% was obtained by adding 0.5wt% and 0.3 wt% Na2CO3 solutions,respectively.By adding 0.5 wt% Na2CO3 solution,the change of the reflectivity was very small.But,when adding 0.3 wt% Na2CO3 solution,the average reflectivity of textured surface has a large increase,and it was not good to form a pyramid surface morphology.