中文摘要：

利用射频等离子体增强化学气相沉积（PECVD）技术低温制备了氢化纳米晶硅（nc-Si：H）薄膜．通过优化沉积参数，得到晶粒尺度小于10nm，晶态体积比为58％的nc-Si：H薄膜．对nc-Si：H薄膜的光电特性进行研究．结果表明，在i00mW／cmz的光照下，nc-Si：H薄膜的光电导率为1．5×10^-3Ω^-1·cm^-1，室温暗电导率为8．4×10^-4Ω^-1·cm^-1．光学带隙为1．46eV．利用射频PECVD制备的nc-Si：H薄膜具有明显的量子点特征．

英文摘要：

Nanocrystalline silicon（nc-Si：H） films were deposited at low temperatures by radio friquency plasma enhanced chemical vapor deposition technique （PECVD）. The nc-Si ： H thin films with the crystal grain size of smaller than 10 nm and the crystal volume fraction X, of 58% were obtained by optimizing deposition parameters. The electrical and optical properties of the nc-Si： H films were investigated,and the results showed that the nc-Si： H films have a high photo-conductivity σp of 1.5^-3Ω^-1·cm^-1 under 100 mW/cm^2 illumination,a dark-conductivity σd of 8.4^-4Ω^-1·cm^-1 at room temperature and a optical band gap of 1.46 eV. The nc-Si： H films deposited by rf-PECVD evidently have the features of quantum dot.