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Schottky barrier height lowering induced by CoSi2 nanostructure
  • ISSN号：0947-8396
  • 期刊名称：Applied Physics A-Materials Science & Processi
  • 时间：0
  • 页码：93-98
  • 相关项目：Si(110)衬底上杂质分凝肖特基结源漏形成及其机理研究
作者： Jiang, Yu-Long|Qu, Xin-Ping|Ru, Guo-Ping|Li, Bing-Zong|
同期刊论文项目
Si(110)衬底上杂质分凝肖特基结源漏形成及其机理研究
期刊论文 10 会议论文 8 专利 3
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