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Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer
  • 期刊名称：Microelectron. Eng.
  • 时间：0
  • 页码：-
  • 相关项目：Si(110)衬底上杂质分凝肖特基结源漏形成及其机理研究
作者： 郭骁|唐旸|蒋玉龙|
同期刊论文项目
Si(110)衬底上杂质分凝肖特基结源漏形成及其机理研究
期刊论文 10 会议论文 8 专利 3
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