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TaN/Ta as an Effective Diffusion Barrier for Direct Contact of Copper and NiSi
  • ISSN号：1099-0062
  • 期刊名称：Electrochemical and Solid-State Letters
  • 时间：0
  • 页码：9-13
  • 相关项目：Si(110)衬底上杂质分凝肖特基结源漏形成及其机理研究
作者： Jiang, Yu-Long|Xie, Qi|Qu, Xin-Ping|Zhang, David W.|Deduytsche, Davy|Detavernier, Christophe|
同期刊论文项目
Si(110)衬底上杂质分凝肖特基结源漏形成及其机理研究
期刊论文 10 会议论文 8 专利 3
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