位置：成果数据库 > 期刊 > 期刊详情页
Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si struc
  • ISSN号：0167-9317
  • 期刊名称：Microelectronic Engineering
  • 时间：0
  • 页码：573-577
  • 相关项目：Si(110)衬底上杂质分凝肖特基结源漏形成及其机理研究
作者： Wang, Xiao-Rong|Jiang, Yu-Long|Xie, Qi|Detavernier, Christophe|Ru, Guo-Ping|Qu, Xin-Ping|Li, Bing-Zong|
同期刊论文项目
Si(110)衬底上杂质分凝肖特基结源漏形成及其机理研究
期刊论文 10 会议论文 8 专利 3
同项目期刊论文
Schottky barrier height lowering induced by CoSi2 nanostructure
Annealing induced hysteresis suppression for TiN/HfO2/GeON/p-Ge capacitor
Fermi Level Depinning Failure for Al/GeO2/Ge Contacts
Effective Schottky Barrier Height Modulation by an Ultrathin Passivation Layer of GeO(x)N(y) for Al/
Study of nickel silicide formation on Si(1 1 0) substrate
Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer
The Influence of Ultraviolet Irradiation on Polarization Fatigue in Ferroelectric Polymer Films
TaN/Ta as an Effective Diffusion Barrier for Direct Contact of Copper and NiSi