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Annealing induced hysteresis suppression for TiN/HfO2/GeON/p-Ge capacitor
  • ISSN号：0268-1242
  • 期刊名称：Semiconductor Science and Technology
  • 时间：0
  • 页码：-
  • 相关项目：Si(110)衬底上杂质分凝肖特基结源漏形成及其机理研究
作者： Li, Quan-Li|Xie, Qi|Jiang, Yu-Long|Ru, Guo-Ping|Qu, Xin-Ping|Li, Bing-Zong|Zhang, David W.|Deduytsche, Davy|Detavernier, Christophe|
同期刊论文项目
Si(110)衬底上杂质分凝肖特基结源漏形成及其机理研究
期刊论文 10 会议论文 8 专利 3
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