采用共沉淀法在水相中将CdS外延生长于CdSe半导体纳米晶(CdSe NCs)表面,制备了结晶形态较好的CdSe/CdS核壳结构半导体纳米晶(CdSe/CdSC/SNCs),并改善了CdSe NCs的荧光性能。通过X射线衍射,透射电镜和选区电子衍射分析证明了核壳结构的形成,并通过紫外可见光吸收光谱和荧光光谱分析证明了核壳结构对CdSe NCs荧光性能的改善。此外,实验结果表明:控制CdSe核合成中Cd前驱体溶液pH值能获得粒径分布较窄的CdSe/CdSC/SNCs;采用不同浓度比的Cd和Se前驱体溶液可以有效调节核壳结构半导体纳米晶的粒径;选择合适的CdSe与CdS摩尔比及壳层中Cd与S摩尔比能改善CdSe/CdSC/SNCs的荧光性能。
CdSe/CdS core/shell semiconductor nanocrystals(CdSe/CdS C/S NCs) were prepared by CdS epitaxial growth on the surface of CdSe semiconductor NCs in aqueous phase through co-precipitation.The as-prepared CdSe/CdS C/S NCs possessed good crystallinity and improved the photoluminescence(PL) property of CdSe NCs.X-ray diffraction,transmission electron microscopy and selective area electron diffraction analysis confirmed the epitaxial growth of CdS on the surface of CdSe NCs,and ultraviolet-visible absorption and ...