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A physics-based memristor model based on chalcogenide alloy
  • ISSN号：1573-4137
  • 期刊名称：Current Nanoscience
  • 时间：2015.10.1
  • 页码：676-681
  • 相关项目：面向人工神经网络的新型相变忆阻器的模型研究
作者： L Wang|C-H Yang|J Wen|Y-X Peng|
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面向人工神经网络的新型相变忆阻器的模型研究
期刊论文 22 会议论文 2
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