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A Physics-Based Three Dimensional Model for Phase-Change Probe Memory
  • ISSN号：1533-4880
  • 期刊名称：Journal of Nanoscience and Nanotechnology
  • 时间：2015.4.1
  • 页码：2785-2789
  • 相关项目：面向人工神经网络的新型相变忆阻器的模型研究
作者： CD Wright|MM Aziz|J Ying|G-W Yang|
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面向人工神经网络的新型相变忆阻器的模型研究
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