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Physical principles and current status of emerging non-volatile solid state memories
  • ISSN号：1738-8090
  • 期刊名称：Electronic Materials Letters
  • 时间：2015.8.1
  • 页码：505-543
  • 相关项目：面向人工神经网络的新型相变忆阻器的模型研究
作者： L Wang|C-H Yang|J Wen|
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