位置：成果数据库 > 期刊 > 期刊详情页
Optimisation of write performance of phase-change probe memory for future storage applications
  • ISSN号：1941-4900
  • 期刊名称：Nanoscience and Nanotechnology Letters
  • 时间：0
  • 页码：-
  • 相关项目：面向人工神经网络的新型相变忆阻器的模型研究
作者： J Wen|C-H Yang|S Gai|X-S Miao|
同期刊论文项目
面向人工神经网络的新型相变忆阻器的模型研究
期刊论文 22 会议论文 2
同项目期刊论文
Optimisation of scanning probe phase-change memory in terms of the thermal conductivities of capping
Overview of emerging memristor families from resistive memristor to spintronic memristor
Optimisation of readout performance of phase-change probe memory in terms of capping layer andprobe
基于透视成像的呼吸与肺部组织运动的关系研究
Physical principles and current status of emerging non-volatile solid state memories
The oxidation behaviour of diamond like carbon for phase-change probe memory application
A physics-based three dimensional readout model for phase-change probe memory
The next generation mass storage devices - Physical principles and current status
A contact resistance model for scanning probe phase-change memory
Design of an optimised readout architecture for phase-change probe memory using Ge2Sb2Te5 media
A Physics-Based Three Dimensional Model for Phase-Change Probe Memory
Terabit-per-square-inch scanning probe phase-change memory model based on nucleation-growth theory
An improved electrical switching and phase transition model for scanning probe phase-change memory
基于四元小波变换自适应双变量模型的图像去噪
The route for ultra-high recording densityusing probe-based data storage device
Associative memory function found on phase-change nanoscale device
A physics-based memristor model based on chalcogenide alloy