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Effect of sputtering bias voltage on the structure and properties of Zr–Ge–N diffusion barrier films
  • ISSN号：0257-8972
  • 期刊名称：Surface and Coatings Technology
  • 时间：2013.8.8
  • 页码：S237-S240
  • 相关项目：用于同位素电池的多孔硅的几个基本问题的研究
作者： L.W. Lin|B. Liu|D. Ren|C.Y. Zhan|G.H. Jiao|K.W. Xu|
同期刊论文项目
用于同位素电池的多孔硅的几个基本问题的研究
期刊论文 15 会议论文 2
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