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Effect of initial-annealing on thermal stability of hydrogen in C–SiC:H films
  • ISSN号：0168-583X
  • 期刊名称：Nuclear Instruments and Methods in Physics Researc
  • 时间：2012.3.3
  • 页码：134-137
  • 相关项目：用于同位素电池的多孔硅的几个基本问题的研究
作者： 任丁|
同期刊论文项目
用于同位素电池的多孔硅的几个基本问题的研究
期刊论文 15 会议论文 2
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