位置：成果数据库 > 期刊 > 期刊详情页
Characterization of the surface layer due to oxygen for the hydrogen related C-SiC films
  • ISSN号：0042-207X
  • 期刊名称：Vacuum
  • 时间：2010.7.7
  • 页码：26-29
  • 相关项目：用于同位素电池的多孔硅的几个基本问题的研究
作者： Zou, Yu|Du, Ji-fu|Dai, Hai-yang|Ren, Ding|Huang, Ning-kang|
同期刊论文项目
用于同位素电池的多孔硅的几个基本问题的研究
期刊论文 15 会议论文 2
同项目期刊论文
Effect of initial-annealing on the microstructure of C–SiC/Cu composite coatings
Release of hydrogen during transformation from porous silicon to silicon oxide at normal temperature
含IPA的TMAH溶液对湿法腐蚀硅倒金字塔阵列微观形貌演化的研究
Study on the Porosity of TiO2 Films Prepared by Using Magnetron Sputtering Deposition
Study in the oxygen contamination on the surface of C-SiC films
Effect of initial-annealing on thermal stability of hydrogen in C–SiC:H films
Effect of sputtering bias voltage on the structure and properties of Zr–Ge–N diffusion barrier films
Cu(Ge) alloy films with zirconium addition on barrierless Si for excellent property improvement
Microstructure evolution of W(Mo)/Cu nanometer multilayer films under He+ ion irradiation
Fabrication of porous silicon nanotips by using argon ion-beam irradiation
调幅W（Mo）/Cu纳米多层膜He^＋离子辐照响应行为