中文摘要：

用分子束外延技术在BaF2（111）衬底上生长了PbSe单晶薄膜，观测了表面形貌和微结构．结果表明，在高Se／PbSe束流比（≥0．4）条件下，PbSe按照二维层状模式生长，外延层中的应力通过位错滑移发生塑性形变而获得充分弛豫，获得的PbSe薄膜是具有单原子层平整度的表面台阶和螺旋结构；降低Se／PbSe束流比至0．2，首次在PbSe样品表面观察到规则的三角形纳米孔状结构；当Se／PbSe束流比为0时，PbSe薄膜表面出现三维岛状结构，应力只能得到部分弛豫．在BaF2（111）衬底上分子束外延生长PbSe单晶薄膜的最佳温度为450℃．

英文摘要：

PbSe single-crystal films were grown on （111） surface of BaF2 substrate by molecular beam epitaxy and the surface morphology micro-structural were obcerved. The results show that a 2D layer-by-layer mode prevails during PbSe film growth at high Se/PbSe beam flux ratios （≥0.4）. Strain in the PbSe epilayers relaxes completely by the glide of dislocations, which leads to plastic deformation of epilayer, and the main features of surface morphologies are atomic smooth surface steps and spirals. Regular triangle holes were observed for the first time on the surface of PbSe epilayers which were grown at low Se/PbSe beam flux ratio （0.2）. When Se/PbSe beam flux ratio was further decreased to 0, 3D islands formed on the PbSe surface, and the strain only relaxed partially. The optimal growth temperature for PbSe film is 450 ℃.