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Pb1-xSrxSe薄膜材料的微结构和光学特性
  • 期刊名称:Journal of Inorganic Materials,22(6), 1108(2007)
  • 时间:0
  • 分类:O472[理学—半导体物理;理学—物理]
  • 作者机构:[1]浙江大学物理系,杭州310027, [2]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050
  • 相关基金:国家自然科学基金(10434090)
  • 相关项目:IV-VI族半导体低维结构的光、电、磁学特性及其中红外激光器研究
中文摘要:

采用分子束外延的方法在BaF2衬底(111)上制备出了高质量的Pb1-xSrxSe(0≤X≤0.050)薄膜.X射线衍射结果表明,Pb1-xSrxSe薄膜为立方相NaCl型晶体结构,没有观察到SrSe相分离现象,薄膜的取向为平行于衬底(111)晶面.薄膜晶格常数随Sr含量的增加逐渐增大,Sr含量由Vegard公式得到.再用理论模拟Pb1-xSrxSe薄膜透射光谱的方法得到了相应的带隙.最后通过介电函数模型拟合得到了PbSe和Pb1-xSrxSe薄膜在光子能量位于基本带隙附近的折射率n和吸收系数a.

英文摘要:

High quality Pb1-xSrxSe (0≤ x ≤0.050) thin films were grown on BaF:(111) substrates by using molecular beam epitaxy(MBE). Optical and structural properties of the Pb1-xSrxSe films were studied using transmission spectrum and high resolution X-ray diffraction (HRXRD). HRXRD patterns indicate that Pb1-xSrxSe films has cubic-phase structure, with no SrSe phase separation. The films orientation is parallel to (111) surface of substrate. The lattice constants of the Pb1-xSrxSe films increase with increasing Sr content. The Sr content can be obtained by using Vegard formula. Sharp absorption edges are observed in the transmission spectrum of Pb1-xSrxSe films. The fundamental band gap of the Pb1-xSrxSe films is attained by simulation. Refractive indexes and absorption coefficients near the fundamental band-gap are obtained by simulation using dielectric function model(DFM).

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