采用分子束外延的方法在BaF2衬底(111)上制备出了高质量的Pb1-xSrxSe(0≤X≤0.050)薄膜.X射线衍射结果表明,Pb1-xSrxSe薄膜为立方相NaCl型晶体结构,没有观察到SrSe相分离现象,薄膜的取向为平行于衬底(111)晶面.薄膜晶格常数随Sr含量的增加逐渐增大,Sr含量由Vegard公式得到.再用理论模拟Pb1-xSrxSe薄膜透射光谱的方法得到了相应的带隙.最后通过介电函数模型拟合得到了PbSe和Pb1-xSrxSe薄膜在光子能量位于基本带隙附近的折射率n和吸收系数a.
High quality Pb1-xSrxSe (0≤ x ≤0.050) thin films were grown on BaF:(111) substrates by using molecular beam epitaxy(MBE). Optical and structural properties of the Pb1-xSrxSe films were studied using transmission spectrum and high resolution X-ray diffraction (HRXRD). HRXRD patterns indicate that Pb1-xSrxSe films has cubic-phase structure, with no SrSe phase separation. The films orientation is parallel to (111) surface of substrate. The lattice constants of the Pb1-xSrxSe films increase with increasing Sr content. The Sr content can be obtained by using Vegard formula. Sharp absorption edges are observed in the transmission spectrum of Pb1-xSrxSe films. The fundamental band gap of the Pb1-xSrxSe films is attained by simulation. Refractive indexes and absorption coefficients near the fundamental band-gap are obtained by simulation using dielectric function model(DFM).