中文摘要：

通过溶胶-凝胶（Sol-Gel）法在Pt/Ti/SiO2/Si基底上制备了多层PT/PZT（PbTiO3/Pb（Zr0.52Ti0.48）O3）薄膜,研究了不同退火时间对其纳米结构、结晶性能及相变特性的影响。利用FESEM测试了不同退火时间对薄膜纳米结构的影响,选用XRD与Raman分析了薄膜的结晶取向及相变特点。实验结果表明,随着退火时间的增加,薄膜的三方相向四方相转变,并具有（110）择优取向。退火时间为20min是PZT薄膜的最佳退火时间,此时薄膜的结晶效果良好、晶粒大小均匀、具有纯钙钛矿结构,此种结构的薄膜有望应用于MEMS器件中。

英文摘要：

The PT/PZT（PbTiO3/Pb（Zr0.52Ti0.48）O3）multilayered thin films deposited on Pt/Ti/SiO2/Si substrates is prepared by Sol-Gel method.The influence of different annealing time on the nanostructure,crystal orientation and phase change characteristics is analyzed.The influence of different annealing time on nanostructure using FESEM and on the crystal orientation and phase change characteristics using XRD and Raman are measured separately.The test result reveals that at elevated annealing time,the thin film will transform from trigonal phase into tetragonal phase,and have a preferred orientation of（110）.The optimized annealing time is found to be 20 min,at which the thin film possesses perfect crystallization,uniform grain size and pure perovskite phase.It is expected that this kind of thin film can be used in MEMS devices.