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中文摘要：
采用固相烧结法制备了Na0.5Bi4.5Ti4-2xNbxTaxO15（NBTNT-x,0≤x≤0.06）铋层状压电陶瓷材料,研究了不同量Nb、Ta掺入对Na0.5Bi4.5Ti4O15陶瓷结构和电性能的影响。结果表明,所有样品均为单一的铋层状结构。适量Nb,Ta掺入能细化陶瓷晶粒,提高其致密性,降低电导率σ和介电损耗tanδ;同时,居里温度TC随Nb、Ta掺入量的增加而降低,但均高于610℃;当x=0.02时,陶瓷样品电性能最佳,即压电常数d33=17pC/N,机电耦合常数kp=4.19%,kt=18.10%,品质因数Qm=3 527,剩余极化强度Pr=10.50μC/cm^2。
英文摘要：
Bismuth layer-structured piezoelectric ceramics Na0.5Bi4.5Ti4-2xNbxTaxO15（NBTNT-x,0≤x≤0.06）were prepared by using the solid state processing.The effects of the different amount of Nb and Ta modification on the microstructure and electrical properties of Na0.5Bi4.5Ti4O15 ceramics have been investigated.The results reveal that all of the samples have a pure Aurivillius type structure.The sizes of the grain become small and unanimity with a moderate addition of Nb and Ta,while theσand tanδof the Na0.5Bi4.5Ti4O15 ceramics are reduced.The Curie temperature（TC）decreases with the addition increase of Nb and Ta.The TC of all the samples is above 610 ℃.When x= 0.02,the ceramic exhibited optimum electrical properties：d33=17pC/N,kp=4.19 %,kt=18.10%,Qm=3 527,Pr= 10.50μC/cm^2.
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