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中文摘要：
采用同相法（成型压力～12MPa）获得了Nb改性的Bi4Ti3O12（BIT＋xmol％Nb2O5）层状压电陶瓷．研究发现随着Nb2O5含量的增加，a－b面取向的品粒逐渐增多，晶粒尺寸愈细化与均匀．Nb2O5的引入明显降低了BIT系列陶瓷的导电率和介电损耗，提高了陶瓷的相对密度、压电与机电性能．适量Nb2O5（x=4．00）掺杂时，陶瓷的电导率（-10^-13S／cm）比纯BIT的降低了2个数量级，且该陶瓷的相对密度ρ=98．7％，tanδ=0．23％，d33=18pC／N，Qm=2804，kp=8．1％，kt=18．6％，Np=2227Hz·m，Nt=2025Hz·m．BIT＋xmol％Nb2O5（x=4．00）陶瓷在600℃经退极化处理后，其d33基本保持不变（-17pC／N），表明该材料在高温器件领域具有良好的应用前景．
英文摘要：
Nb-modified Bi4Ti3O12 （BIT＋xmol% Nb2O5） layer-structured piezoelectric ceramics were prepared by the solid state reaction method （at the pressure of about 12MPa）. The quantity of grain growth along a-b plane is much more than that along c-axis with the increasing amount of Nb2Os. After Nb205 doping, the size of grain becomes small and unanimity. The electrical conductivity and dielectric loss are significantly reduced, while relative density, piezoelectric activity and electromechanical properties of Bi4TiaO12-based ceramics are improved by the modification of Nb2Os. The electrical conductivity of BIT＋4.00mol% Nb205 （10^-13S/cm） decreases by 2 orders of magnitude compared with the undoped one. Besides, the BIT＋4.00mol% Nb205 ceramic exhibits optimum electrical properties： relative density p=98.7%, tanδ=0.23%, da3=lSpC/N, Qm=2804, kp=8.1%, kt=18.6%, Np=2227Hz·m and Nt=2025Hz·m, and the d33 remains 17pC/N after annealing at 600℃, which indicates that the ceramic is a potential material for high temperature applications.
同期刊论文项目
同项目期刊论文
Electronic and Optical Properties of KNbO3,NaNbO3 and K0.5Na0.5NbO3 in Paraelectric Cubic Phase: a C
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