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中文摘要：
采用固相法制备了Ce和Sr复合掺杂的Bi4Ti2.92Nb0.08O12.04（BTN＋0.5x%CeO2＋0.5x%SrCO3，0≤x≤1.5，质量分数）铋层状高温无铅压电陶瓷，研究了不同含量的Ce和Sr掺杂对BTN系陶瓷微观结构及电性能的影响。结果表明：样品均为单一的铋层状结构相，Ce和Sr的引入明显提高了陶瓷的压电性能。当掺杂量x＝0.9时，样品具有最佳性能：压电常数d33＝29pC/N，平面机电耦合系数kp＝8.77%，介电损耗tanδ＝0.13%，剩余极化强度Pr＝15.87μC？cm－2和Curie温度TC＝627℃。此外，该组分陶瓷样品具有良好的压电稳定性，表明该材料在高温领域下具有良好的应用前景。
英文摘要：
Bismuth layer-structured high-temperature lead-＇free piezoelectric ceramics of Ce and Sr co-doped Bi4 Ti2. 92 Nb0.08 O12. 04 （BTN＋0. 5x%CeO2 ＋0. 5x%SrCO3, 0≤x≤1. 5, mass fraction） were fabricated by a solid-state reaction method. The effect of doping content of Ce and Sr on the microstructure and electrical properties of the BTN ceramics was investigated. The re- sults show that all the ceramic samples have a single phase of bismuth oxide layered structure. The piezoelectric activity of the ceramics is improved v/a the modification of Ce and St. The ceramic with the doping content x of 0.9 exhibites the optimum e- lectrical properties, i. e. , the piezoelectric constant d33 of 29 pC/N, planar electromechanical coupling factor kv of 8. 77 %, die- lectric loss tan δ of 0.13% , remanent polarization Pr of 15.87 μC/em2 and the Curie temperature Tc of 627 ℃. In addition, the component ceramic sample possesses a high piezoelectric stability, showing that the ceramic is a potential material for high-tern-perature applications.
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