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中文摘要：
通过选用乌洛托品作为络合剂，采用电化学沉积的方法成功地制备出钴掺杂的氧化锌薄膜。通过对样品的XRD表征，得出生长的样品为ZnO纤锌矿结构，并没有其他杂相峰，即没有出现分相；通过对样品XPS的分析显示Co离子在薄膜中以＋2价的形式存在；为进一步验证Co^2＋离子进人ZnO的晶格，对掺杂不同Co^2＋浓度的样品进行PL谱的测量，从发光光谱上可以看出随着掺杂Co^2＋浓度的增加，带隙逐渐变窄，发光峰位红移，证明Co^2＋部分取代了Zn^2＋而进入了ZnO晶格中。
英文摘要：
Recently, diluted magnetic semiconductors （DMSs） have attracted a lot of attention because of their potential technological applications in optoelectronic, magnetoelectronic, and microwave devices. Ⅱ-Ⅵ semiconductors such as ZnO are attractive as DMS candidates because the solubility limit of magnetic ions is extremely high. Cobalt is the magnetic impurity most soluble in ZnO. Therefore, numerous experimental groups have tried to grow ZnO semiconductors doped with ferromagnetic transition metals. But there is few report of electrodeposition applied to grow Co doped ZnO semiconductors. That is due to the ferromagnetic transition metal ions are difficult to dope into the ZnO crystal lattice successfully. In this paper, the Co doped ZnO thin films were prepared by electrdeposition with adding hexamethylenetetramine. The optical properties of the Co-doped ZnO are also studied. The deposition was carried out in aqueous solutions containing Co（ NO3 ）2 · 6H2O with different mol fraction of 2%, 7% and 10%, respectively. The grown films were characterized by means of X-ray diffraction, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The XRD results show that no additional diffraction peaks are observed that would correspond to any impurity phase; the XPS spectra show that the Co ions have a chemical valence of ＋ 2, furthermore PL spectra show Co ions have doped into the ZnO crystal lattices successfully. In conclusion, Co doped ZnO thin films have been fabricated by cathodic electrodeposition on Si substrates from aqueous electrolytes with adding hexamethylenetetramine. The results indicates that it is very important to add hexarnethylenetetramine into the electrolytes for the growth of Co doped ZnO thin films.
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