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P-MBE制备氮掺杂p型ZnO中空穴的散射机制

期刊名称：发光学报
时间：0
页码：111-114
语言：中文
分类：O472.4[理学—半导体物理;理学—物理]
作者机构：[1]中国科学院长春光学精密机械与物理研究所,吉林长春130033, [2]中国科学院研究生院,北京100049
相关基金：基金项目：国家自然科学基金重点基金（60336020,50532050）;国家“973”计划（2006CB60406）资助项目
相关项目：稳定、高效的p型ZnO薄膜的制备及器件研究

作者：姚斌|范希武|赵东旭|申德振|孙建武|张吉英|张振中|李炳辉|刘益春|吕有明|

关键词：氧化锌, P型掺杂, 散射机制, P-MBE, ZnO , p-type doping, scattering mechanisms , P-MBE

中文摘要：

利用等离子体辅助的分子束外延（P-MBE）技术，在蓝宝石衬底上制备了氮掺杂的P型ZnO薄膜。通过变温霍尔测量研究了空穴浓度和迁移率随温度的变化特性。对载流子浓度拟合的结果表明氮受主具有75meV的能级深度。通过对各种散射机制下迁移率的讨论，发现由晶粒及其晶界组成的这种结构极大地降低了P型ZnO中载流子的迁移率。

英文摘要：

With a wide bandgap of 3. 370 eV and a large exciton binding energy of 60 meV at room tempera- ture, ZnO has attracted considerable attention as a promising material for optoelectronic devices, especially in short-wavelength light emitting diodes （LEDs） and laser diodes. However, the lack of high-quality p-type ZnO has hampered the development of ZnO homostructural LEDs. The reported p-type ZnO films always have very low Hall mobility at room temperature （ 1-10 cm^2·V^-1·s^-1 ）. For improving the quality of p-type ZnO, it is very important to understand the hole scattering mechanisms in these films. In this paper, nitrogen-doped p-type ZnO films were grown on sapphire substrate by plasma-assisted molecular beam epitaxy, using radical NO as oxygen source and nitrogen dopant. The electrical properties of p-type ZnO films were investigated by temperature-dependent Hall-effect （T-Hall） measurements. The activation energy of N acceptor was deduced to be 75 meV by fitting the T-Hall data. The hole scattering mecha- nisms were studied both experimentally and theoretically. The experimental Hall mobility was found to be considerably lower than the calculated mobility including ionized impurity scattering, acoustic-mode deformation potential scattering, piezoelectric potential scattering, and polar optical phonon scattering. However, taking the effect of inhomogeneity on the mobility into account, the calculated mobility was in excellent agreement with the experimental data. This indicates that besides ionized impurity and acoustic deformation potential scattering at low temperatures and the polar optical phonon scattering at high temperatures, the effects of the inhomogeneous microstructure in p-type ZnO films play a more important role in determining the hole mobility.

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