欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
利用等离子体辅助分子束外延（P-MBE）的方法，在c平面的蓝宝石衬底上制备了高质量的MgxZn1-xO合金薄膜。通过改变Mg源的温度，得到了不同Mg组份的MgxZn1-xO合金薄膜；通过引入ZnO的低温缓冲层，有效地提高了MgxZn1-xO合金薄膜的结晶质量。随着Mg组份的增加，MgxZn1-xO的X射线衍射的（002）衍射峰逐渐向大角度方向移动。对样品进行光致发光（PL）谱的测量，在室温下观察到了较强的紫外发光。随Mg浓度的增加，紫外发光峰向高能侧移动，并且发光峰逐渐展宽。通过对x=0．15的样品进行变温光谱的测量研究了紫外发光峰起因，得到了MgxZn1-xO的发光是来自于自由激子的发光。自由激子束缚能为54meV。
英文摘要：
ZnO is a wide band-gap semiconductor with good electrical and optical properties. ZnO has higher exciton binding energy of 59 meV at room temperature, leading to a lower threshold, and is favorable for efficient operation of optical devices. Short wavelength devices based on ZnO have become even more interesting. On the other hand, band gap devices based on ZnO/ZnMgO superlattices or quantum wells can confine both excitons and photons in the low dimensions, making the stimulated exciton-related emission process more efficient. Therefore, keeping focus on the MgxZn1-xO films for purpose of exploring its potential applications in ultraviolet optoelectronics is more and more important. High quality MgxZn1-xO alloy films have been grown by plasma-assisted molecular beam epitaxy on c-sapphire （c-Al2O3 ） substrate. The growth temperature was 800 ℃ , the temperature of the zinc source is fixed at 245 ℃, and the flow rate of oxygen is 0.8 seem. The MgxZn1-xO films were obtained with different Mg contents by changing the temperature of the Mg source. The quality of the MgxZn1-xO films was improved by growing ZnO buffer layers at low temperature. Their crystal structures are characterized by X-ray diffraction spectroscopy （XRD）. The XRD patterns indicate all the MgxZn1-xO films with the （002） preference orientation of hexagonal wurtzite structure. When x value is varied from 0 to 0. 15, the （002） diffraction peak of MgxZn1-xO shifts to the large angle side with increasing Mg contents, and the full wide at half maximum （FWHM） of the diffraction peak is widen with increasing Mg contents. The lattice constant of c-axis decreases from 0. 520 5 nm to 0.518 9 nm as the Mg content increased from 0 to 0.15. The FWHM is only 0. 145° for the Mg0.15Zn0.85O film, which exhibited the high quality of the MgxZn1-xO films. The intense ultraviolet emission was shown in photoluminescence spectra at room temperature, which shifts from 3.29 eV （x = 0） to 3.54 eV（x =0.15 ） with increasing x values. The bandgap
同期刊论文项目
同项目期刊论文
Control of structure, conduction behavior, and band gap of Zn 1-xMgxO films by nitrogen partial pres
Acceptor formation mechanisms determination from electrical and optical properties of p-type ZnO dop
Effects of nitrogen doping and illumination on lattice constants and conductivity behavior of zinc o
Optical and electrical properties of p-type ZnO fabricated by NH3 plasma post-treated ZnO thin films
Valence band offset of ZnO/Zn0.85Mg0.15O heterojunction measured by x-ray photoelectron spectroscopy
Structural and optical properties of Cd1-xFexSe microstructures grown by metalorganic chemical vapor
Acceptor related photoluminescence from ZnO:Sb nanowires fabricated by chemical vapor deposition met
Structural, optical, and hydrogenation properties of ZnO nanowall networks grown on a Si (111) subst
Fabrication and magnetization measurement of Ni thin films on silicon substrate by electrodeposition
Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO:N Film Produced by Ann
Influence of hydrostatic pressure on the native point defects in wurtzite ZnO: Ab initio calculation
Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spec
Biaxial stress-dependent optical band gap, crystalline, and electronic structure in wurtzite ZnO: Ex
Effect of annealing on conductivity behavior of undoped zinc oxide prepared by rf magnetron sputteri
Oxygen flux influence on the morphological, structural and optical properties of Zn1-xMgxO thin film
Formation of stable and reproducible low resistivity and high carrier concentration p -type ZnO dope
Cu+-codoping inducing the room-temperature magnetism and p-type conductivity of ZnCoO diluted magnet
Annealing temperature dependent electrical and optical properties of ZnO and MgZnO films in hydrogen
Optical property of hexagonal nanocrystalline zno film on Si substrate prepared by plasma-enhanced C
Nitrogen-related recombination mechanisms in p -type ZnO films grown by plasma-assisted molecular be
Room temperature excitonic spontaneous and stimulated emission properties in ZnO/MgZnO multiple quan
Nitrogen partial pressure-dependent Mg concentration, structure, and optical properties of MgxZn1-xO
Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted m
Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO
期刊信息
位置：