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LDO regulator DC characteristic and susceptibility prediction after electrical stress ageing
  • ISSN号：0026-2714
  • 期刊名称：Microelectronics Reliability
  • 时间：2013.9.1
  • 页码：1273-1277
  • 相关项目：FeCMOS基本门电路辐照效应及机理研究
作者： J. Wu*, A. Boyer, J. Li, S. Bendhia, B. Vrignon|
同期刊论文项目
FeCMOS基本门电路辐照效应及机理研究
期刊论文 43
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