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Investigation of unique total ionizing dose effects in 0.2 μm partially-depleted silicon-on-insulato
  • ISSN号：0168-9002
  • 期刊名称：Nuclear Instruments and Methods in Physics Researc
  • 时间：2014
  • 页码：128-132
  • 相关项目：FeCMOS基本门电路辐照效应及机理研究
作者： HUANG Hui-Xiang|BI Da-Wei|TANG Ming-Hua|ZHANG Zheng-Xuan|
同期刊论文项目
FeCMOS基本门电路辐照效应及机理研究
期刊论文 43
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