位置：成果数据库 > 期刊 > 期刊详情页
Characterization of Changes in LDO Susceptibility after Electrical Stress
  • ISSN号：0018-9375
  • 期刊名称：IEEE Transactions on Electromagnetic Compatibility
  • 时间：2013.10.10
  • 页码：883-890
  • 相关项目：FeCMOS基本门电路辐照效应及机理研究
作者： J. Wu*, A. Boyer, J. Li, S. B. Dhia, R. Shen.|
同期刊论文项目
FeCMOS基本门电路辐照效应及机理研究
期刊论文 43
同项目期刊论文
ADPLL数学建模与设计实现
基于MATLAB的RFID空中接口数据分析
Microstructure, Phase Transition, and Piezoelectric Properties of Cerium-Substituted Bismuth Titanat
Investigation of unique total ionizing dose effects in 0.2 μm partially-depleted silicon-on-insulato
Dual-band RF receiver for GPS-L1 and compass-B1 in a 55-nm CMOS
Electrical properties of La0 . 6Ca0 . 4MnO3 – Bi3 . 4Nd0 . 6Ti3O12 thin films derived by a
Microstructure, magnetoelectric properties and leakage mechanisms of La0.7Ca0.3MnO3/Bi3.15Nd0.85Ti3O
Magnetoelectric Pb ( Zr0 . 52Ti0 . 48 ) O3 – La0 . 65Sr0 . 35MnO3 composite thin films der
Magnetoelectric Bi3 . 25Nd0 . 75Ti3O12 – La0 . 6Ca0 . 4MnO3 composite thin films derived b
Bipolar and unipolar resistive switching behaviors of sol-gel-derived SrTiO3 thin films with differe
A continuously and widely tunable 5 dB-NF 89.5 dB-Gain 85.5 dB-DR CMOS TV receiver with digitally-as
Resistive Switching Properties of Sol - Gel - Derived V - Doped SrTiO3 Thin Films
Top electrode-dependent resistance switching behaviors of ZnO thin films deposited on Pt/Ti/SiO2/Si
电离辐射环境下金属-铁电-绝缘体-基底结构铁电场效应晶体管电学性能的模
Reconfigurable All-Band RF CMOS Transceiverfor GPS/GLONASS/Galileo/Beidou With Digitally As
A high linearity downconverter for digital broadcasting system
LDO regulator DC characteristic and susceptibility prediction after electrical stress ageing
溶胶-凝胶法制备的Pt/Bi_(3.15)Nd_(0.85)Ti_3O_(12)/SrTiO_3/Si电容结构及其性能研究
电离辐射环境下金属-铁电-绝缘体-基底结构铁电场效应晶体管电学性能的模拟
热解温度对镧、锰共掺杂铁酸铋薄膜铁电性能的影响（英文）
Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation