采用溶胶-凝胶法制备了Pt/Bi3.15Nd0.85Ti3O12/SrTiO3/Si多层电容即金属-铁电层-绝缘层-半导体结构,并对其电学性能进行了测试与分析。获得的存储窗口电压约为2.5V,漏电流密度低于10-8 A·cm-2,保持时间达7.5h以上。制备的SrTiO3薄膜表现出较高的介电性和较好的绝缘性。
The metal-ferroelectrie-insulator-semiconductor (MFIS) capacitors of Pt/Bi315 Nd0.85 Ti3 O12/SrTiO3/Si structure are fabricated by sol-gel method, and the electrical properties of the MFIS are also investigated. The memory window of 2.5 V, the low leakage current density of 10 -8 A-cm 2, and a long retention time of over 7.5 h are obtained. It indi- cates that the SrTiO3 thin film as an insulating layer shows a relative good dielectric and insulated property.