中文摘要：

为提高微机电系统（MEMS）万向惯性开关的性能,实现工程化应用,对其进行工艺误差与性能关系研究.基于多层UV-LIGA工艺制作多个开关样机,进行主要结构尺寸测量,并确定工艺误差方向;从UV-LIGA工艺过程的曝光、显影与电铸、腐蚀3个阶段,分析误差的产生机理,并进一步分析单一结构误差、非对称误差和偏心误差对开关阈值和接触时间的影响.结果表明：弹簧线宽、厚度、侧壁倾角和两电极间隙等单一结构尺寸的增大会导致阈值增大;非对称误差会导致开关各向刚度不一致,使阈值散布更大;偏心误差会大幅度减小开关轴向阈值,而对径向阈值影响较小.对多个开关样机的测试结果验证了开关工艺误差及单一结构误差对阈值影响的正确性.

英文摘要：

Dependence of fabrication error on performance of a micro-electro-mechanical system（MEMS）omnidirectional inertial switch was investigated to enhance performance of the switch and implement its engineering application.The switch was fabricated by employing multi-layer UV-LIGA（Ultraviolet Lithography,Galvanoformung,Abformung）manufacturing technology.The main dimensions of the switch prototypes were measured and the direction of fabrication error was confirmed.Furthermore,the mechanism of fabrication error was discussed based on three phases including exposure,development and electroforming,and corrosion in the UV-LIGA process,and the influence of single structure error,asymmetrical error and eccentricity error on threshold and contact time of the switch was further analyzed.Results indicate that the threshold increases with the increase of single structure dimensions,such as spring width,thickness,sidewall angle and gap between two electrodes;asymmetric error leads to inconsistent stiffness in different directions and a larger threshold distribution;eccentricity error seriously decreases axial threshold,but hardly affects radial threshold.The tested results of the switch prototypes verifies the validity of fabrication error of the switch and influence of single structure error on the threshold.