Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation
- ISSN号：1674-1056
- 期刊名称：《中国物理B：英文版》
- 时间：0
- 分类：O571.436[理学—粒子物理与原子核物理;理学—物理]
- 作者机构：[1]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai 200050, China, [2]771st Research Institute of China Electronics Technology Group Corporation, Xi'an 710054, China, [3]China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China
- 相关基金：Project supported by the National Fund for Distinguished Young Scholars （Grant No 59925205）, the Basic Research Program of Shanghai （Grant No 02DJ14069）, and the National Natural Science Foundation of China （Grant No 10305018）.
作者：
张恩霞[1,3], 钱聪[1], 张正选[1], 林成鲁[1], 王曦[1], 王英民[2], 王晓荷[2], 赵桂茹[2], 恩云飞[3], 罗宏伟[3], 师谦[3]
中文摘要：
E-mail： yqfzhexia@mail.sim.ac.cn
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