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中文摘要：
推导出红外探测温度与真实温度之间的关系.通过确定合适的发射率修正方法,得到了IG-BT芯片的真实温度分布,得出芯片中心温度高于边缘温度,纠正了以往对该问题的错误认识,通过发射率修正和实验数据验证了该结论的正确性.
英文摘要：
The theory on detecting temperature with infrared thermal imaging system is discussed in detail.The relationship between infrared acquisition temperature and real temperature is deduced.By selecting an appropriate emissivity modification method,the real temperature distribution of IGBT chip is detected,and the conclusion that the center temperature is higher than the vicinity is presented.Therefore,the former inaccurate viewpoint is rectified and it is proved by the emissivity modification and integrated experiment data.It can be significant for the investigation on IGBT failure mechanism and analysis of reliability.
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SABER-Based Simulation for Compact Dynamic Electro-Thermal Modeling Analysis of Power Electronic Mod
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