欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
根据IGBT物理结构与基区过剩载流子的分布特点进行半导体物理公式推导,参考现有模型并对其不足之处进行改进,把整个基区分为多个区域并采用不同的边界条件分别求解连续性方程,提出了一种考虑了载流子二维分布的改进的稳态解析模型,较准确地反映了IGBT基区过剩载流子分布,得到了更为准确的V-I特性仿真结果,通过实验验证了该模型的准确性.
英文摘要：
Base on IGBT＇s physical structure and base excess carrier distribution,this paper carried on semiconductor formulary derivation and improved the shortage of the existing model,proposes a new improved IGBT static state analytical model which involve the two-dimensional distribution.This model divides the whole IGBT base into several parts and calculates continuity equation respectively according to different boundary condition,therefore it can get exact base excess carrier distribution and V-I characteristic of IGBT,at last the results of experimentation prove the veracity of this model.
位置：
同期刊论文项目
