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中文摘要：
新一代场终止型（field stop,FS）绝缘栅双极型晶体管（insulated gate bipolar transistor,IGBT）的仿真模型目前都是采用传统穿通型（punch through,PT）IGBT的建模方法,由于FS结构与PT结构在厚度、掺杂浓度等方面都存在很大的不同,不可避免的会存在较大的偏差。在对已有PT模型进行理论分析和公式推导的基础上,根据FS型IGBT的结构特点和工作机制,在场终止层内采用了大注入的假设条件,同时考虑基区内载流子的复合作用,提出了一种改进的FS型开关瞬态模型。通过2种模型仿真波形与实测波形的比较,验证了该模型具有更高的准确性。
英文摘要：
The new generation of field-stop（FS） insulated gate bipolar transistor（IGBT） presently adopts the same simulation model as the traditional punch through（PT） IGBT does.Since FS and PT structures are different in width and doping concentrations,errors can be existed in these models of FS IGBT unavoidably.On the basis of theoretical analysis and equation derivation of the PT models existed,and according to the structure characteristic and operation principle of FS IGBT,an improved FS switching transient model was developed using the high-level injection in FS layers and with recombination of excess carriers in the base region.The proposed model was verified by comparison of simulation and experiment waveforms.
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