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Cathodoluminescence study of GaN-based film structures
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  • 相关项目：InN材料的MOCVD生长研究
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InN材料的MOCVD生长研究
期刊论文 36 会议论文 3
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Al composition variations in AlGaN films grown on low temperature GaN buffer layer by metalorganic c
A GaN photodetector integrated structure for wavelength characterization of ultraviolet light
Fabrication and Optical Characterization of GaN-Based Nanopillar Light Emitting Diode
Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodet
Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical Vapour Deposition
Structural characterization of Mn implanted AlInN
Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition
Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition
High-precision determination of lattice constants and structural characterization of InN thin films
Optical analysis of dislocation-related physical processes in GaN-based epilayers
The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic che
Effect of interface roughness and dislocation density on the electroluminescence intensity of InGaN
Structural properties of Ne implanted GaN
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN
穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响
高阻氮化镓外延层的异常光吸收
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si （111） substrate with AlGaN interlayer
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapordeposition
Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction
MOCVD生长的GaN薄膜中缺陷团引起的X射线漫散射研究
MOCVD生长的GaN：Mg外延膜的光电性质
InN的光学性质
生长温度对MOCVD外延生长InGaN的影响
Thermal analysis of GaN laser diodes in a package structure