中文摘要：

基于双极晶体管（BJT）结构的静电放电（ESD）保护器件具有双向导通特性和良好的保护性能,在ESD保护中应用广泛。鉴于该类器件在负阻效应下维持电压的产生机理和建模方面的研究较少,提出了一种维持电压的数学建模方法。首先分析了多种调制效应对维持电压的影响,优化了模型参数;其次,基于0.6μm BiCMOS工艺对NPN型BJT的结构及电学性能进行了仿真分析,通过数据拟合得到了维持电压的估算模型;最后,制备了两种不同结构的样品并进行了测试,实测数据与估算值的相对误差范围约12%-15%,表明建立的维持电压模型具有较高的可靠性。

英文摘要：

The electro-static discharge（ESD） protection device based on the bipolar junction transistor（BJT） structure has been widely used due to its good bidirectional conduction ability and excellent protection performance.Since there is a little in-depth research on the production mechanism and modeling of the holding voltage under the negative resistor effect in such ESD protection device,we propose a modeling method for the holding voltage.By analyzing the impact of various modulation effects on the holding voltage,the modeling parameters are optimized first.Then,the structure and the electrical properties of NPN BJT are studied by simulation under the 0.6 μm BiCMOS process,and a holding voltage estimation model is established by data fitting.Finally,two different BJT-based ESD protection devices are prepared and tested.The relative error range between the estimated and the measured data is about 12%~15%,indicating that the established holding voltage model is quite reliable.