中文摘要：

采用分解电势的方法求解二维泊松方程,建立了考虑电子准费米势的短沟道双栅MOSFET的二维表面势模型,并在其基础上导出了阈值电压、短沟道致阈值电压下降效应和漏极感应势垒降低效应的解析模型。研究了不同沟道长度、栅压和漏压情况下的沟道表面势,分析了沟道长度和硅膜厚度对短沟道效应的影响。研究结果表明,电子准费米势对开启后的器件漏端附近表面势有显著影响,新模型可弥补现有模型中漏端附近表面势误差较大的缺点;对于短沟道双栅MOSFET,适当减小硅膜厚度可抑制短沟道效应。

英文摘要：

An analytical two-dimensional （2-D） surface potential model for short channel double-gate （DG） MOSFETs with considering the electron quasi-Fermi potential has been estab- lished by solving 2-D Possion＇s equation using the decomposition method. Analytical models for threshold Voltage, threshold voltage roll-off effect and drain-induced barrier lowering effect are derived based on the potential model. The channel surface potential at different channel lengths, gate and drain voltages are investigated. Effects of channel length and silicon film thickness on the short channel effects are analyzed. Results indicate that the electron quasi-Fermi potential has significant effect on the surface potential near the drain when the device is turned on. Compari- sons with existing models show that the error of surface potential near the drain can be decreased in our model. For short channel DG MOSFETs, decreasing the silicon film thickness appropri- ately can suppress the short channel effects.