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Interface optimization and modification of band offsets of ALD-derived Al<sub>2</sub>O&l
  • ISSN号：0925-8388
  • 期刊名称：Journal of Alloys and Compounds
  • 时间：2014.12.5
  • 页码：672-675
  • 相关项目：HfTiON/TaON叠层高k栅介质薄膜的制备及其在锗场效应晶体管中的应用探索
作者： H.H. Wei|G. He|J. Gao|M. Liu|X.S. Chen|Z.Q. Sun|
同期刊论文项目
HfTiON/TaON叠层高k栅介质薄膜的制备及其在锗场效应晶体管中的应用探索
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