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Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate st
  • ISSN号：2050-7534
  • 期刊名称：Journal of Materials Chemistry C
  • 时间：2014
  • 页码：5299-5308
  • 相关项目：HfTiON/TaON叠层高k栅介质薄膜的制备及其在锗场效应晶体管中的应用探索
作者： He, Gang|Liu, Jiangwei|Chen, Hanshuang|Liu, Yanmei|Sun, Zhaoqi|Chen, Xiaoshuang|Liu, Mao|Zhang, Lide|
同期刊论文项目
HfTiON/TaON叠层高k栅介质薄膜的制备及其在锗场效应晶体管中的应用探索
期刊论文 10
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