位置：成果数据库 > 期刊 > 期刊详情页
Interfacial Control and Modulation of Band Alignment of Atomic Layer Deposition-Derived HfO2/Si Gate
  • ISSN号：1947-2935
  • 期刊名称：Science of Advanced Materials
  • 时间：2014
  • 页码：2652-2658
  • 相关项目：HfTiON/TaON叠层高k栅介质薄膜的制备及其在锗场效应晶体管中的应用探索
作者： H. H. Wei|G. He|M. Liu|Y. M. Liu|M. Zhang|X. S. Chen|Z. Q. Sun|
同期刊论文项目
HfTiON/TaON叠层高k栅介质薄膜的制备及其在锗场效应晶体管中的应用探索
期刊论文 10
同项目期刊论文
Modulation of optical and electrical properties of sputtering-derived amorphous InGaZnO thin films b
Annealing-Ambient-Dependent Thermal Stability of Ultrathin AlOxNy Films Grown by Metalorganic Chemic
Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by
Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate st
Temperature dependence of chemical states and band alignments in ultrathin HfOxNy/Si gate stacks
Interface optimization and modification of band offsets of ALD-derived Al<sub>2</sub>O&l
碳纳米管对聚苯乙烯分子运动的影响